Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector

被引：162

作者：

Stiff, AD ^{[1
]}

Krishna, S

Bhattacharya, P

Kennerly, SW

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] USA, Res Labs, Sensors & Electron Devices Directorate, Adelphi, MD 20783 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2001年 / 37卷 / 11期

关键词：

D O I：

10.1109/3.958360

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth, fabrication, and characterization of a normal-incidence, high-temperature, mid-wavelength infrared, InAs-GaAs vertical quantum-dot infrared photodetector with a single Al0.3Ga0.7As current-blocking barrier are described and discussed in detail. A specific detectivity approximate to3 x 10(9) cmHz(1/2)/W is measured for a detector temperature of 100 K at a bias of 0.2 V. Detector characteristics are measured for temperatures as high as 150 K. The superior low bias performance of the vertical quantum-dot infrared photodetector ensures its compatibility with commercially available silicon read-out circuits necessary for the fabrication of a focal plane array.

引用

页码：1412 / 1419

页数：8

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