Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer

被引：103

作者：

Wang, SY ^{[1
]}

Lin, SD

Wu, HW

Lee, CP

机构：

[1] Acad Sinica, Inst Astron & Astrophys, Taipei 115, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 08期

关键词：

D O I：

10.1063/1.1347006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low dark current InAs/GaAs quantum-dot infrared photodetectors (QDIPs) are demonstrated. The dark current is reduced by over three orders of magnitude by using a thin AlGaAs current blocking layer. This thin AlGaAs layer reduces the dark current much more than the response signal. The responsivity at 0.5 V is 0.08 A/W with a peak detection wavelength at 6.5 mum. The corresponding detectivity is 2.5x10(9) cm Hz(1/2)/W-1/2, which is the highest detectivity reported for a QDIP at 77 K. (C) 2001 American Institute of Physics.

引用

页码：1023 / 1025

页数：3

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