Observation of phonon bottleneck in quantum dot electronic relaxation

被引：308

作者：

Urayama, J ^{[1
]}

Norris, TB

Singh, J

Bhattacharya, P

机构：

[1] Univ Michigan, Ctr Ultrafast Opt Sci, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[3] Univ Michigan, Solid State Elect Lab, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.86.4930

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Time-resolved differential transmission measurements of self-assembled In(0.4)Ga(0.6)AS quantum dots clearly indicate a phonon bottleneck between the n = 2 and II = 1 electronic levels. The key to this observation is the generation of electrons in dots where there are no holes so that electron-hole scattering does not mask the bottleneck. We use a simple carrier capture model consisting of two capture configurations to explain the bottleneck signal and offer arguments to rule out other possible sources of the signal.

引用

页码：4930 / 4933

页数：4

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