InAsSb InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition

被引：27

作者：

Lane, B ^{[1
]}

Wu, Z ^{[1
]}

Stein, A ^{[1
]}

Diaz, J ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Northwestern Univ, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 23期

关键词：

D O I：

10.1063/1.124120

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report high power mid-infrared electrical injection operation of laser diodes based on InAsSb/ InAsP strained-layer superlattices grown on InAs substrate by metal-organic chemical vapor deposition. The broad-area laser diodes with 100 mu m aperture and 1800 mu m cavity length demonstrate peak output powers of 546 and 94 mW in pulsed and cw operation respectively at 100 K with a threshold current density as low as 100 A/cm(2). (C) 1999 American Institute of Physics. [S0003-6951(99)01123-7].

引用

页码：3438 / 3440

页数：3

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