High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 μm

被引：19

作者：

Wu, D ^{[1
]}

Lane, B ^{[1
]}

Mohseni, H ^{[1
]}

Diaz, J ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Northwestern Univ, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 09期

关键词：

D O I：

10.1063/1.123496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Midinfrared lasers with an asymmetrical InPAsSb/InAsSb/AlAsSb double heterostructure are reported. Using the asymmetrical double heterostructure, p- and n-cladding layers are separately optimized; high energy-gap AlAsSb (E-g approximate to 1.5 eV) for the p-type cladding layer to reduce the leakage current, and thus to increase T-o, and low energy-gap InPAsSb (E-g approximate to 0.5 eV) for the n-cladding layer to have low turn-on voltage. 100-mu m-width broad-area lasers with 1000 mu m cavity length exhibited peak output powers of 1.88 W in pulse and 350 mW in continuous wave modes per two facets at T=80 K with T-o of 54 K and turn-on voltage of 0.36 V. Maximum peak output powers up to 6.7 W were obtained from a laser bar of total aperture of 400 mu m width and cavity length of 1000 mu m, with a differential efficiency of 34% and far-field beam divergence narrower than 40 degrees at 80 K. (C) 1999 American Institute of Physics. [S0003-6951(99)00909-2].

引用

页码：1194 / 1196

页数：3

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