15-nm base type-II InP/GaAsSb/InP DHBTs with FT=384 GHz and a 6-V BVCEO

被引：29

作者：

Liu, HG ^{[1
]}

Watkins, SP

Bolognesi, CR

机构：

[1] Simon Fraser Univ, Sch Engn Sci, Burnaby, BC V5A 1S6, Canada

[2] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 03期

基金：

加拿大自然科学与工程研究理事会;

关键词：

breakdown voltage (BV); cutoff frequencies; double heterojunction bipolar transistors (DHBTs); GaAsSb; GaInAs; heterojunction bipolar transistors (HBTs); InP;

D O I：

10.1109/TED.2005.863542

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Type-II InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) with a 15-nm base were fabricated by contact lithography: 0.73 X 11 mu m(2) emitter devices feature f(T) = 384 GHz (f(MAX) = 262 GHz) and BVCEO = 6 V. This is the highest f(T) ever reported for InP/GaAsSb DHBTs, and an "all-technology" record f(T) X BVCEO product of 2304 GHz.V. This result is credited to the favorable scaling of InP/GaAsSb/InP DHBT breakdown voltages (BVCEO) in thin collector structures.

引用

页码：559 / 561

页数：3

共 21 条

[1] Neutral base recombination in InP/GaAsSb/InP double-heterostructure bipolar transistors:: Suppression of Auger recombination in p+ GaAsSb base layers -: art. no. 253506 [J].

Bolognesi, CR ;

Liu, HG ;

Tao, N ;

Zhang, X ;

Bagheri-Najimi, S ;

Watkins, SP .

APPLIED PHYSICS LETTERS, 2005, 86 (25) :1-3

[2] InP/GaAsSb type-II DHBTs with fT>350 GHz [J].

Chu-Kung, BF ;

Feng, M .

ELECTRONICS LETTERS, 2004, 40 (20) :1305-1307

[3]

DAHLSTROM M, 2003, THESIS U CALIFORNIA

[4] 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO ≥ 6 V [J].

Dvorak, MW ;

Bolognesi, CR ;

Pitts, OJ ;

Watkins, SP .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (08) :361-363

[5]

DVORKA MW, 2001, THESIS S FRASER U BU

[6]

Griffin JM, 2005, ENERGY J, V26, P1

[7] InGaAs/InP DHBTs with 120-nm collector having simultaneously high fT, fmax ≥ 450 GHz [J].

Griffith, Z ;

Rodwell, MJW ;

Fang, XM ;

Loubychev, D ;

Wu, Y ;

Fastenau, JM ;

Liu, AWK .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (08) :530-532

[8]

GRIFFITH Z, 2005, P IEEE INT C IND PHO

[9] ON DEFINITION OF CUTOFF FREQUENCY-FT [J].

GUMMEL, HK .

PROCEEDINGS OF THE IEEE, 1969, 57 (12) :2159-&

[10] Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600 GHz [J].

Hafez, W ;

Feng, M .

APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3

← 1 2 3 →