Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600 GHz

被引：54

作者：

Hafez, W ^{[1
]}

Feng, M ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 15期

关键词：

D O I：

10.1063/1.1897831

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pseudomorphic InP/InGaAs heterojunction bipolar transistors (PHBTs) using a compositionally graded collector (10% indium grading) and graded base (6% indium grading) to reduce the transit time of the device are reported. A 0.4 x 6 mu m(2) HBT achieves excellent f(T) values of 604 GHz (associated f(MAX)=246 GHz) at a collector current density of 16.8 mA/mu m(2), with a dc gain of 65 and a breakdown voltage of BVCEO = 1.7 V. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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