Lateral scaling of 0.25μm InP/InGaAs SHBTs with InAs emitter cap

被引:7
作者
Hafez, W [1 ]
Feng, M [1 ]
机构
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
关键词
D O I
10.1049/el:20045962
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
InP/InGaAs single heterojunction bipolar transistors (SHBTs) have been fabricated using a highly doped InAs emitter cap for a 50% reduction in emitter resistance to allow aggressive lateral scaling to inerease f(MAX). Type I InP SHBTs have been fabricated with 0.25 mum emitter widths and achieve f(MAX) values as high as 478 GHz on a laterally scaled L-E = 1 mum device, and maintain breakdown voltages greater than 4 V.
引用
收藏
页码:1151 / 1153
页数:3
相关论文
共 5 条
[1]   InP/InGaAs SHBTs with 75 nm collector and fT > 500 GHz [J].
Hafez, W ;
Lai, JW ;
Feng, M .
ELECTRONICS LETTERS, 2003, 39 (20) :1475-1476
[2]   Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA [J].
Hafez, W ;
Lai, JW ;
Feng, M .
IEEE ELECTRON DEVICE LETTERS, 2003, 24 (07) :427-429
[3]   Submicron InP-InGaAs single he-terojunction bipolar transistors with fT of 377 GHz [J].
Hafez, W ;
Lai, JW ;
Feng, M .
IEEE ELECTRON DEVICE LETTERS, 2003, 24 (05) :292-294
[4]  
IDA M, S 2003 25 ANN TECHN
[5]  
RIEH JS, 2003, INT C IND PHOSPH REL