Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA

被引：3

作者：

Hafez, W ^{[1
]}

Lai, JW ^{[1
]}

Feng, M ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61871 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 07期

关键词：

heterojunction bipolar transistors (HBTs);

D O I：

10.1109/LED.2003.814008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Scaling of submicron InP-InGaAs HBTs is investigated for low-power high-speed applications in mixed signal circuits. Device performance for transistors fabricated with a 0.5-mum emitter width and varying emitter lengths are studied. The 0.5 mum x 2 mum devices yielded excellent low-current RF performance, with an f(T) = 173 GHz and an, f(MAX) = 187 GHz at 1 mA, the highest values reported for InP-based devices to date.

引用

页码：427 / 429

页数：3

共 7 条

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