Measurement of the electrical resistivity and Hall coefficient at high temperatures

被引：240

作者：

Borup, Kasper A. ^{[2
,3
]}

Toberer, Eric S. ^{[4
]}

Zoltan, Leslie D. ^{[5
]}

Nakatsukasa, George ^{[5
]}

Errico, Michael ^{[5
]}

Fleurial, Jean-Pierre ^{[5
]}

Iversen, Bo B. ^{[2
,3
]}

Snyder, G. Jeffrey ^{[1
]}

机构：

[1] CALTECH, Pasadena, CA 91125 USA

[2] Aarhus Univ, Ctr Mat Crystallog, Dept Chem, DK-8000 Aarhus, Denmark

[3] Aarhus Univ, iNANO, DK-8000 Aarhus, Denmark

[4] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA

[5] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2012年 / 83卷 / 12期

基金：

新加坡国家研究基金会; 美国国家科学基金会;

关键词：

THERMOELECTRIC PROPERTIES; EFFECT APPARATUS; SEMICONDUCTORS; PULSE;

D O I：

10.1063/1.4770124

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The implementation of the van der Pauw (VDP) technique for combined high temperature measurement of the electrical resistivity and Hall coefficient is described. The VDP method is convenient for use since it accepts sample geometries compatible with other measurements. The technique is simple to use and can be used with samples showing a broad range of shapes and physical properties, from near insulators to metals. Three instruments utilizing the VDP method for measurement of heavily doped semiconductors, such as thermoelectrics, are discussed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770124]

引用

页数：7

共 28 条

[1] APPARATUS FOR MEASURING RESISTIVITY AND HALL COEFFICIENT OF SEMICONDUCTORS [J].