200mm germanium-on-insulator (GeOI) by Smart Cut™ technology and recent GeOI pMOSFETs achievements.

被引：14

作者：

Akatsu, T ^{[1
]}

Deguet, C ^{[1
]}

Sanchez, L ^{[1
]}

Richtarch, C ^{[1
]}

Allibert, F ^{[1
]}

Letertre, F ^{[1
]}

Mazure, C ^{[1
]}

Kernevez, N ^{[1
]}

Clavelier, L ^{[1
]}

Le Royer, C ^{[1
]}

Hartmann, JM ^{[1
]}

Loup, V ^{[1
]}

Meuris, M ^{[1
]}

De Jaeger, B ^{[1
]}

Raskin, G ^{[1
]}

机构：

[1] Soitec SA, F-38190 Bernin, France

来源：

2005 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS | 2005年

关键词：

D O I：

10.1109/SOI.2005.1563565

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：137 / 138

页数：2

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