学术探索
学术期刊
新闻热点
数据分析
智能评审

A Pedagogical Perspective on Ambipolar FETs

被引：63
作者：
Kang, Moon Sung [2 ]
Frisbie, C. Daniel [1 ]
机构：
[1] Univ Minnesota, Minneapolis, MN 55455 USA
[2] Soongsil Univ, Dept Chem Engn, Seoul 156743, South Korea
来源：
CHEMPHYSCHEM | 2013年 / 14卷 / 08期
基金：
美国国家科学基金会; 新加坡国家研究基金会;
关键词：
ambipolar field-effect transistors; channel potential; charge carriers; currentvoltage characteristics; transistor operation regime; FIELD-EFFECT TRANSISTORS; LIGHT-EMITTING TRANSISTORS; TRANSPORT; EMISSION; CHANNEL;
D O I：
10.1002/cphc.201300014
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The operation of an ambipolar field-effect transistor (FET) is described using a simple diagram depicting the gate voltage and channel potential profile relative to the injection threshold voltage of charge carriers. From this diagram, the transition between transistor-operation regimes and the resulting currentvoltage relations can be easily understood. Also, a practical guidance for the operation of an ambipolar FET is provided. In particular, conditions to achieve the true ambipolar regime, which is of particular interest for light-emitting transistor operation, and a correct method to extract electron and hole mobilities from a given currentvoltage curve are presented.
引用
收藏
页码：1547 / 1552
页数：6
相关论文
共 20 条
[11]  
Schwierz F, 2010, NAT NANOTECHNOL, V5, P487, DOI [10.1038/NNANO.2010.89, 10.1038/nnano.2010.89]
[12]   Unified description of potential profiles and electrical transport in unipolar and ambipolar organic field-effect transistors [J].
Smits, Edsger C. P. ;
Mathijssen, Simon G. J. ;
Colle, Michael ;
Mank, Arjan J. G. ;
Bobbert, Peter A. ;
Blom, Paul W. M. ;
de Boer, Bert ;
de Leeuw, Dago M. .
PHYSICAL REVIEW B, 2007, 76 (12)
[13]   Ambipolar charge transport in organic field-effect transistors [J].
Smits, Edsger C. P. ;
Anthopoulos, Thomas D. ;
Setayesh, Sepas ;
van Veenendaal, Erik ;
Coehoorn, Reinder ;
Blom, Paul W. M. ;
de Boer, Bert ;
de Leeuw, Dago M. .
PHYSICAL REVIEW B, 2006, 73 (20)
[14]   Light emission from an ambipolar semiconducting polymer field-effect transistor [J].
Swensen, JS ;
Soci, C ;
Heeger, AJ .
APPLIED PHYSICS LETTERS, 2005, 87 (25) :1-3
[15]   Ambipolar light-emitting transistors of a tetracene single crystal [J].
Takahashi, Tetsuo ;
Takenobu, Taishi ;
Takeya, Jun ;
Iwasa, Yoshihiro .
ADVANCED FUNCTIONAL MATERIALS, 2007, 17 (10) :1623-1628
[16]   High current density in light-emitting transistors of organic single crystals [J].
Takenobu, Taishi ;
Bisri, Satria Zulkarnaen ;
Takahashi, Tetsuo ;
Yahiro, Masayuki ;
Adachi, Chihaya ;
Iwasa, Yoshihiro .
PHYSICAL REVIEW LETTERS, 2008, 100 (06)
[17]   PbSe nanocrystal solids for n- and p-channel thin film field-effect transistors [J].
Talapin, DV ;
Murray, CB .
SCIENCE, 2005, 310 (5745) :86-89
[18]   Device modeling of long-channel nanotube electro-optical emitter [J].
Tersoff, J ;
Freitag, M ;
Tsang, JC ;
Avouris, P .
APPLIED PHYSICS LETTERS, 2005, 86 (26) :1-3
[19]   Electron and ambipolar transport in organic field-effect transistors [J].
Zaumseil, Jana ;
Sirringhaus, Henning .
CHEMICAL REVIEWS, 2007, 107 (04) :1296-1323
[20]   Efficient top-gate, ambipolar, light-emitting field-effect transistors based on a green-light-emitting polyfluorene [J].
Zaumseil, Jana ;
Donley, Carrie L. ;
Kim, Ji-Seon ;
Friend, Richard H. ;
Sirringhaus, Henning .
ADVANCED MATERIALS, 2006, 18 (20) :2708-+
12