Strain distribution control on the silicon wafer scale for advanced nanostructure fabrication

Looking to the long-term future of Si semiconductor technology, we propose, fabricate, and demonstrate strain distribution control on the planar Si wafer scale for advanced nanostructure self-assembly. Oxygen ions are implanted through patterned layers on the Si wafer; the sample is then annealed at 1325 degreesC to produce bulk oxide inclusions which yield a strain distribution. Strained epitaxial growth of Ge on the Si(001) substrate surface at 550 degreesC in ultrahigh vacuum produces three-dimensional islands whose location and size distribution are well controlled. The degree of localization control is in agreement with simulations of the elastic strain distribution. (C) 2002 American Institute of Physics.