High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition

4H-SiC layers have been homoepitaxially grown at a high growth rate of 25 mum/h by chimney-type vertical hot-wall chemical vapor deposition at 1700 degreesC. Through photoluminescence measurement, the intrinsic defect, so-called L-1 peak, was found to be reduced under a C-rich condition. In the deep level transient spectroscopy measurement, the Z(1) center was also found to be suppressed under a C-rich condition. For a 75-mum-thick epilayer, the net donor concentration was reduced to as low as 5x10(12) cm(-3). In low-temperature photoluminescence, free exciton peaks are dominant, indicating high purity of the epilayer. (C) 2002 American Institute of Physics.