Transport Coefficients of InAs Nanowires as a Function of Diameter

被引：63

作者：

Dayeh, Shadi A. ^{[1
]}

Yu, Edward T. ^{[1
]}

Wang, Deli ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

SMALL | 2009年 / 5卷 / 01期

基金：

美国国家科学基金会;

关键词：

arsenic; charge transport; indium; nanowires; transistors; ELECTRON-MOBILITY; ACCUMULATION LAYERS; GROWTH; INVERSION; MECHANISM; DENSITY;

D O I：

10.1002/smll.200800969

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A comprehensive method to extract the transport coefficients in nanowires InAs (NW) as functions of their diameter and vertical and lateral fields, thus enabling consistent comparison due to their field dependence, was presented. Metal-organic chemical vapor deposition was utilized to grow the InAs NWs on thermally grown SiO2/Si substrates with 40-nm-diameter Au nanoparticles on top. It is found that the presence of positively charged surface states at the oxide/InAs interface decreases the gate field and prevents full depletion of the InAs NW channel. In InAs NWs, reduction of the interface states through proper surface passivation or formation of core-shell heterostructures may lead to unpinning of the Fermi energy in the conduction band and reduction of its detrimental effects on electric mobility.

引用

页码：77 / 81

页数：5

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