Polarization Selection Rules for Inter-Landau-Level Transitions in Epitaxial Graphene Revealed by the Infrared Optical Hall Effect

被引:17
作者
Kuehne, P. [1 ,2 ]
Darakchieva, V. [3 ]
Yakimova, R. [3 ]
Tedesco, J. D. [4 ]
Myers-Ward, R. L. [5 ]
Eddy, C. R., Jr. [5 ]
Gaskill, D. K. [5 ]
Herzinger, C. M. [6 ]
Woollam, J. A. [6 ]
Schubert, M. [1 ,2 ]
Hofmann, T. [1 ,2 ]
机构
[1] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA
[2] Univ Nebraska, Ctr Nanohybrid Funct Mat, Lincoln, NE 68588 USA
[3] Linkoping Univ, IFM, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden
[4] ABB Inc, Bland, VA 24315 USA
[5] US Naval Res Lab, Washington, DC 20375 USA
[6] JA Woollam Co Inc, Lincoln, NE 68508 USA
基金
美国国家科学基金会; 瑞典研究理事会;
关键词
Graphene - Silicon carbide - Decomposition - Hall effect - Mixing - Monolayers;
D O I
10.1103/PhysRevLett.111.077402
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report on the polarization selection rules of inter-Landau-level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm(-1) on epitaxial graphene grown by thermal decomposition of silicon carbide. We observe symmetric and antisymmetric signatures in our data due to polarization preserving and polarization mixing inter-Landau-level transitions, respectively. From field-dependent measurements, we identify that transitions in coupled graphene monolayers are governed by polarization mixing selection rules, whereas transitions in decoupled graphene monolayers are governed by polarization preserving selection rules. The selection rules may find explanation by different coupling mechanisms of inter-Landau-level transitions with free charge carrier magneto-optic plasma oscillations.
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页数:5
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