Multicomponent magneto-optical conductivity of multilayer graphene on SiC

被引：44

作者：

Crassee, I. ^{[1
]}

Levallois, J. ^{[1
]}

van der Marel, D. ^{[1
]}

Walter, A. L. ^{[2
,3
]}

Seyller, Th. ^{[4
]}

Kuzmenko, A. B. ^{[1
]}

机构：

[1] Univ Geneva, Dept Phys Mat Condensee, CH-1211 Geneva 4, Switzerland

[2] Max Planck Gesell, Fritz Haber Inst, Dept Mol Phys, D-14195 Berlin, Germany

[3] EO Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

[4] Univ Erlangen Nurnberg, Lehrstuhl Tech Phys, D-91058 Erlangen, Germany

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 03期

基金：

瑞士国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.84.035103

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Far-infrared diagonal and Hall conductivities of multilayer epitaxial graphene on the C face of SiC were measured using magneto-optical absorption and Faraday rotation in magnetic fields up to 7 T and temperatures between 5 and 300 K. Multiple components were identified in the spectra, including (i) a quasiclassical cyclotron resonance, originating from the highly doped graphene layer closest to SiC, (ii) transitions between low-index Landau levels (LLs), which stem from weakly doped layers, and (iii) a broad optical absorption background. Electron-and hole-type LL transitions are optically distinguished and shown to coexist. An electron-hole asymmetry of the Fermi velocity of about 2% was found within one graphene layer, while the Fermi velocity varies by about 10% across the layers. The optical intensity of the LL transitions is several times smaller than is theoretically expected for isolated graphene monolayers without electron-electron and electron-phonon interactions.

引用

页数：8

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