Visible to vacuum ultraviolet dielectric functions of epitaxial graphene on 3C and 4H SiC polytypes determined by spectroscopic ellipsometry

被引：31

作者：

Boosalis, A. ^{[1
,2
]}

Hofmann, T. ^{[1
,2
]}

Darakchieva, V. ^{[3
]}

Yakimova, R. ^{[3
]}

Schubert, M. ^{[1
,2
]}

机构：

[1] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

[2] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA

[3] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 01期

基金：

美国国家科学基金会; 瑞典研究理事会;

关键词：

CARBIDE; GROWTH;

D O I：

10.1063/1.4732159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spectroscopic ellipsometry measurements in the visible to vacuum-ultraviolet spectra (3.5-9.5 eV) are performed to determine the dielectric function of epitaxial graphene on SiC polytypes, including 4H (C-face and Si-face) and 3C SiC (Si-face). The model dielectric function of graphene is composed of two harmonic oscillators and allows the determination of graphene quality, morphology, and strain. A characteristic van Hove singularity at 4.5 eV is present in the dielectric function of all samples, in agreement with observations on exfoliated as well as chemical vapor deposited graphene in the visible range. Model dielectric function analysis suggests that none of our graphene layers experience a significant degree of strain. Graphene grown on the Si-face of 4H SiC exhibits a dielectric function most similar to theoretical predictions for graphene. The carbon buffer layer common for graphene on Si-faces is found to increase polarizability of graphene in the investigated spectrum. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4732159]

引用

页数：4

共 33 条

[1] Ultrahigh electron mobility in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Jiang, Z. ;

Klima, M. ;

Fudenberg, G. ;

Hone, J. ;

Kim, P. ;

Stormer, H. L. .

SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355

[2] Solid-state decomposition of silicon carbide for growing ultra-thin heteroepitaxial graphite films [J].

Charrier, A ;

Coati, A ;

Argunova, T ;

Thibaudau, F ;

Garreau, Y ;

Pinchaux, R ;

Forbeaux, I ;

Debever, JM ;

Sauvage-Simkin, M ;

Themlin, JM .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) :2479-2484

[3] Measurement of ultrafast carrier dynamics in epitaxial graphene [J].

Dawlaty, Jahan M. ;

Shivaraman, Shriram ;

Chandrashekhar, Mvs ;

Rana, Farhan ;

Spencer, Michael G. .

APPLIED PHYSICS LETTERS, 2008, 92 (04)

[4] Epitaxial graphene [J].

de Heer, Walt A. ;

Berger, Claire ;

Wu, Xiaosong ;

First, Phillip N. ;

Conrad, Edward H. ;

Li, Xuebin ;

Li, Tianbo ;

Sprinkle, Michael ;

Hass, Joanna ;

Sadowski, Marcin L. ;

Potemski, Marek ;

Martinez, Gerard .

SOLID STATE COMMUNICATIONS, 2007, 143 (1-2) :92-100

[5]

Emtsev KV, 2009, NAT MATER, V8, P203, DOI [10.1038/nmat2382, 10.1038/NMAT2382]

[6] Epitaxial Graphenes on Silicon Carbide [J].

First, Phillip N. ;

de Heer, Walt A. ;

Seyller, Thomas ;

Berger, Claire ;

Stroscio, Joseph A. ;

Moon, Jeong-Sun .

MRS BULLETIN, 2010, 35 (04) :296-305

[7] Epitaxial Graphene Growth on SiC Wafers [J].

Gaskill, D. K. ;

Jernigan, G. G. ;

Campbell, P. M. ;

Tedesco, J. L. ;

Culbertson, J. C. ;

VanMill, B. L. ;

Myers-Ward, R. L. ;

Eddy, C. R., Jr. ;

Moon, J. ;

Curtis, D. ;

Hu, M. ;

Wong, D. ;

McGuire, C. ;

Robinson, J. A. ;

Fanton, M. A. ;

Stitt, J. P. ;

Stitt, T. ;

Snyder, D. ;

Wang, X. ;

Frantz, E. .

GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS, 2009, 19 (05) :117-+

[8] Detecting single-electron tunneling involving virtual processes in real time [J].

Gustavsson, S. ;

Studer, M. ;

Leturcq, R. ;

Ihn, T. ;

Ensslin, K. ;

Driscoll, D. C. ;

Gossard, A. C. .

PHYSICAL REVIEW B, 2008, 78 (15)

[9] Structural properties of the multilayer graphene/4H-SiC(000(1) overbar) system as determined by surface x-ray diffraction [J].

Hass, J. ;

Feng, R. ;

Millan-Otoya, J. E. ;

Li, X. ;

Sprinkle, M. ;

First, P. N. ;

de Heer, W. A. ;

Conrad, E. H. ;

Berger, C. .

PHYSICAL REVIEW B, 2007, 75 (21)

[10] Why multilayer graphene on 4H-SiC(000(1)over-bar) behaves like a single sheet of graphene [J].

Hass, J. ;

Varchon, F. ;

Millan-Otoya, J. E. ;

Sprinkle, M. ;

Sharma, N. ;

De Heer, W. A. ;

Berger, C. ;

First, P. N. ;

Magaud, L. ;

Conrad, E. H. .

PHYSICAL REVIEW LETTERS, 2008, 100 (12)

← 1 2 3 4 →