X-ray diffraction study of InAs AlSb interface bonds grown by molecular beam epitaxy

被引：5

作者：

Sato, A ^{[1
]}

Ohtani, K ^{[1
]}

Terauchi, R ^{[1
]}

Ohno, Y ^{[1
]}

Matsukura, F ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Lab Elect Intelligent Syst, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

基金：

日本学术振兴会;

关键词：

X-ray diffraction; InAs AlSb superlattice; interface bonds;

D O I：

10.1016/S0022-0248(98)01475-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Interface bond structures of InAs/AlSb superlattices (SLs) have been investigated by X-ray diffraction (XRD) and photoluminescence (PL) measurements. For heterointerfaces with different anion composition AsxSb1-x, XRD data are found to be in good agreement with simulation results assuming the presence of 1 monolayer InAsxSb1-x at the interfaces. For the sample with an AlAs interface bond, no good fit is obtained for XRD. This indicates that the growth of an InAs/AlSb SL is disrupted at the AlAs interfaces. Correlation between interface configurations and their optical properties is also discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：861 / 863

页数：3

共 6 条

[1] INTERFACE CONTROL IN INAS/ALSB SUPERLATTICES [J].