INTERFACE CONTROL IN INAS/ALSB SUPERLATTICES

被引：33

作者：

BENNETT, BR

SHANABROOK, BV

GLASER, ER

机构：

[1] Naval Research Laboratory, Washington

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 05期

关键词：

D O I：

10.1063/1.112955

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The presence of two species of both cations and anions permits the construction of InAs/AlSb heterostructures with either AlAs- or InSb-like interfaces. Using migration-enhanced epitaxial techniques, we grew InAs/AlSb superlattices with both types of interfaces. The control of interfacial composition was confirmed by x-ray diffraction and Raman spectroscopy measurements. We demonstrate that superlattices displaying multiple x-ray diffraction satellites, distinct planar vibrational modes, and strong photoluminescence can be achieved with both InSb- and AlAs-bonded interfaces using appropriate buffer layers and growth temperatures.

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页码：598 / 600

页数：3

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