Evidence for Klein Tunneling in Graphene p-n Junctions

被引：614

作者：

Stander, N. ^{[1
]}

Huard, B. ^{[1
]}

Goldhaber-Gordon, D. ^{[1
]}

机构：

[1] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.102.026807

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less important and the resistance across the step is in quantitative agreement with predictions of Klein tunneling of Dirac fermions up to a small correction. We also perform magnetoresistance measurements at low magnetic fields and compare them to recent predictions.

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