Image charge method for electrostatic calculations in field-emission diodes

被引:81
作者
Mesa, G
DobadoFuentes, E
Saenz, JJ
机构
[1] UNIV AUTONOMA MADRID,DEPT FIS MAT CONDENSADA,E-28049 MADRID,SPAIN
[2] CSIC,INST CIENCIA MAT,FAC CIENCIAS C3,MADRID,SPAIN
关键词
D O I
10.1063/1.360951
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a method to calculate the electrostatic field between a metallic tip of arbitrary shape and a sample surface. The basic idea is to replace the electrodes by a set of ''image'' charges. These charges are adjusted in order to fit the boundary conditions on the surfaces. As an application of the method, we describe the field characteristics of a field-emission diode as a function of the gap between electrodes for different tip shapes. A comparison between numerical and analytical results is presented. The results do not depend on the overall tip geometry only for gap distances smaller than approximate to 1/2 the tip radius. The field enhancement factor due to the presence of small protrusions on the tip apex is calculated and their influence in near-field-emission scanning tunneling microscopy is also discussed. We show that the electron-field emission from the sample is stable against tip-shape changes due to adsorbate diffusion or atomic rearrangements. (C) 1996 American Institute of Physics.
引用
收藏
页码:39 / 44
页数:6
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