Performance of GaAs microbridge thermocouple infrared detectors

被引:12
作者
Chong, N
Srinivas, TAS
Ahmed, H
机构
[1] Department of Physics, University of Cambridge
[2] University of Cambridge, Cambridge
[3] Indian Institute of Technology, Madras
[4] Institute of Applied Physics, Karlsruhe
[5] Microelectronics Research Center, Cavendish Laboratory, University of Cambridge
[6] Natl. Microlectron. Research Center, Cork
[7] R D in the Intgd. Sensing Syst. Ltd., Ann Arbor, MI
[8] Imperial College, London University, London
[9] T. J. Watson Research Center of IBM, MOS Technology Research Center
[10] Royal Academy of Engineering, Institution of Electrical Engineers, Institute of Physics
关键词
gallium arsenide; heat transport; infrared detectors; thermocouple;
D O I
10.1109/84.585791
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
GaAs microbridge thermocouples with lengths ranging from 40 to 650 mu m and operating at room temperature have been fabricated for the detection of infrared radiation. A CO2 laser of a 10.6-mu m wavelength was used to characterize the performance of the detectors in air and in vacuum. A responsivity of 4.2 V/W with a corresponding detectivity D* = 8 x 10(6) cm Hz(1/2)/W and a time constant of 2.2 ms have been measured in vacuum for 650-mu m-long bridges, and a shorter time constant of 50 mu s was obtained for 40-mu m-long bridges. An analytic thermal transport model has been used to simulate the operation of the sensors. The heat-transfer coefficient has been evaluated by comparing the data from air and vacuum measurements. The spectral response and the absorbance of the microbridge have also been presented. [203]
引用
收藏
页码:136 / 141
页数:6
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