Defects in quantum dots of IIB-VI semiconductors

被引：48

作者：

Babentsov, V. ^{[1
]}

Sizov, F. ^{[1
]}

机构：

[1] Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

OPTO-ELECTRONICS REVIEW | 2008年 / 16卷 / 03期

关键词：

quantum dots; IIB-VI compund semiconductors; quantum dot characterization methods; Auger and deep-level recombinations;

D O I：

10.2478/s11772-008-0025-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This review discusses the properties of structural defects in quantum dots of IIB-VI semiconductors. A great part of this knowledge has been developed in the last years and combined with the improvement in passivation technologies has contributed significantly to the nanotechnology. In this review we introduced the main characterization methods which are used for the study of defects in the nanoform of semiconductors, presented a short description of how native defects can influence the emission spectra, underlined the restrictions which the Auger and deep-level defect recombination imposes on the excitonic emission. We also highlighted the importance of the defect passivation associated with efficiency and photostability of devices.

引用

页码：208 / 225

页数：18

共 83 条

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