Large atomic displacements associated with the nitrogen antisite in GaN

被引：77

作者：

Mattila, T ^{[1
]}

Seitsonen, AP ^{[1
]}

Nieminen, RM ^{[1
]}

机构：

[1] MAX PLANCK GESELL,FRITZ HABER INST,D-14195 BERLIN,DAHLEM,GERMANY

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.54.1474

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present results of an extensive theoretical study of the nitrogen antisite in GaN. The neutral antisite in c-GaN is reported to exhibit metastable behavior similar to the arsenic antisite in GaAs. The feature of interest is the existence of the negative charge states of the nitrogen antisite. Their stability is a consequence of the large band gap. The nitrogen antisite undergoes in the negative charge states a large spontaneous Jahn-Teller displacement in the [111] direction, both in the cubic and in the wurtzite phase. The connection between the nitrogen antisite and the yellow luminescence commonly observed in GaN is discussed.

引用

页码：1474 / 1477

页数：4

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