InGaN-CdSe-ZnSe quantum dots white LEDs

被引：180

作者：

Chen, HS ^{[1
]}

Hsu, CK ^{[1
]}

Hong, HY ^{[1
]}

机构：

[1] Ind Technol Res Inst, Organ Inorgan Hybrid Lab, Union Chem Labs, Hsinchu 300, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 1-4期

关键词：

light-emitting diodes (LEDs); phosphors; quantum dots (QDs);

D O I：

10.1109/LPT.2005.859540

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

White light-emitting diodes (WLEDs) were fabricated by combining blue InGaN chips with luminescent colloidal core-shell CdSe-ZnSe quantum dots (QDs). The core-shell CdSe-ZnSe QDs synthesized by thermal deposition approach exhibited high photoluminescence efficiency with a quantum yield more than similar to 40%, and size-tunable emission wavelengths from 510 to 620 nm. Three-band red-green-blue WLED was successfully assembled by blue InGaN chips and green-emitting and red-emitting CdSe-ZnSe QDs. Based on QDs with flexibly selected color, the WLEDs exhibited white light with a CIE-1931 coordinate of (0.33, 0.33) and color rendering index R-a of 91.

引用

页码：193 / 195

页数：3

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