The effect of carbon on diffusion in silicon

被引：28

作者：

Stolk, PA ^{[1
]}

Gossmann, HJ ^{[1
]}

Eaglesham, DJ ^{[1
]}

Poate, JM ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 36卷 / 1-3期

关键词：

carbon; diffusion; silicon; ion implantation;

D O I：

10.1016/0921-5107(95)01273-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents experimental studies on the interaction between C and interstitials in crystalline Si. Boron doped Si superlattices, grown by molecular beam epitaxy, were used to detect the injection of excess Si self-interstitials (I) from near-surface 5 x 10(13) cm(-2), 40 keV Si implants during annealing. The interstitial-enhanced diffusion of the B marker layers is fully suppressed when the C content is uniformly raised from 10(18) to 2 x 10(19) cm(-3), demonstrating that C acts as a trap for interstitials. The incorporation of a buried layer of C leads to a local reduction of the interstitial concentration without fully obstructing the interstitial flow towards the bulk. The interstitial trapping presumably involves the formation of mobile C-I complexes which pair with substitutional C to become immobile. The effect of C on the diffusion of interstitials in marker layer experiments and metal diffusion studies is analyzed in light of the present observations.

引用

页码：275 / 281

页数：7

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