Vertical CNT-Si Photodiode Array

被引：12

作者：

Ahnood, Arman ^{[1
,2
]}

Zhou, Hang ^{[3
]}

Dai, Qing ^{[1
]}

Vygranenko, Yuri ^{[4
]}

Suzuki, Yuji ^{[5
]}

Esmaeili-Rad, M. R. ^{[6
]}

Amaratunga, Gehan ^{[1
]}

Nathan, Arokia ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge, England

[2] Univ Melbourne, Sch Phys, Melbourne, Vic 3010, Australia

[3] Peking Univ, Shenzhen Grad Sch, Shenzhen, Peoples R China

[4] Inst Super Engn Lisboa, Lisbon, Portugal

[5] UCL, London Ctr Nanotechnol, London, England

[6] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

NANO LETTERS | 2013年 / 13卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Vertical photodiode; carbon nanotube; thin-film silicon; electric-field enhancement; HYDROGENATED AMORPHOUS-SILICON; ELECTRIC-FIELD TRANSPORT; SOLAR-CELLS; IMAGING APPLICATIONS; PIXEL DETECTORS; ENHANCEMENT; PERFORMANCE; EFFICIENCY; NANOWIRES;

D O I：

10.1021/nl401636v

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A photodiode consisting of nanopillars of thin-film silicon p-i-n on an array of vertically aligned carbon nanotubes (CNTs) with a noncontinuous cathode electrode is demonstrated. The structure exploits the intrinsic enhancement of the CNTs' electric field, which leads to reduction in the photodiode's operating voltage and response time and enhancement of optical coupling due to better light trapping, as compared with the conventional planar photodiode. These improvements translate to higher resolution and higher frame rate flat-panel imaging systems for a broad range of applications, including computed tomography and particle detection.

引用

页码：4131 / 4136

页数：6

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