Influence of indium tin oxide treatment using UV-ozone and argon plasma on the photovoltaic parameters of devices based on organic discotic materials

被引:30
作者
Destruel, P [1 ]
Bock, H
Séguy, I
Jolinat, P
Oukachmih, M
Bedel-Pereira, E
机构
[1] Univ Toulouse 3, Lab Genie Elect Toulouse, F-31062 Toulouse 9, France
[2] Ctr Rech Paul Pascal, F-33600 Pessac, France
[3] LAAS CNRS, F-31077 Toulouse 4, France
关键词
organic solar cells; discotic liquid crystals; open-circuit voltage; indium tin oxide (ITO); UV-ozone; argon microwave plasma; Kelvin probe; work function; electronic structure; interface;
D O I
10.1002/pi.1947
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Recently, we reported that the open circuit voltage, V-0C, in two-layer organic solar cells depends on the indium tin oxide (ITO) treatment. However, the V-0C variation details were not clearly understood. The study of the electronic structure at the ITO/organic interface was carried out by using the Kelvin probe method. The results obtained show a strong dependence of the organic vacuum level on the ITO work function, which, in turn, depends on the anode treatment. An abrupt variation of the vacuum level was observed after deposition of a few organic monolayers, which could be attributed to the presence of dipoles at the interface. We demonstrate that the shift magnitude depends on the nature and duration of the ITO treatment. To this end, two different ITO treatments were used. The first one, based on UV-ozone exposure, is known to increase the ITO work function, W-ITO. The second of these uses a microwave argon plasma generated by a repartee cyclotron excitation. This was adapted for decreasing the W-ITO value. An investigation on the origin of these variations ('up and down') is presented in this study. (c) 2005 Society of Chemical Industry.
引用
收藏
页码:601 / 607
页数:7
相关论文
共 33 条
[21]   Characterization of treated indium-tin-oxide surfaces used in electroluminescent devices [J].
Mason, MG ;
Hung, LS ;
Tang, CW ;
Lee, ST ;
Wong, KW ;
Wang, M .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) :1688-1692
[22]  
Nüesch F, 1999, APPL PHYS LETT, V74, P880, DOI 10.1063/1.123397
[23]   New organic discotic materials for photovoltaic conversion [J].
Oukachmih, M ;
Destruel, P ;
Seguy, I ;
Ablart, G ;
Jolinat, P ;
Archambeau, S ;
Mabiala, M ;
Fouet, S ;
Bock, H .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2005, 85 (04) :535-543
[24]  
SEGUY I, 2001, CHEMPHYSCHEM, V7, P448
[25]   Electronic structure of organic/metal interfaces [J].
Seki, K ;
Hayashi, N ;
Oji, H ;
Ito, E ;
Ouchi, Y ;
Ishii, H .
THIN SOLID FILMS, 2001, 393 (1-2) :298-303
[26]   Surface preparation and characterization of indium tin oxide substrates for organic electroluminescent devices [J].
So, SK ;
Choi, WK ;
Cheng, CH ;
Leung, LM ;
Kwong, CF .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 68 (04) :447-450
[27]   Angle dependent X-ray photoemission study on UV-ozone treatments of indium tin oxide [J].
Song, WJ ;
So, SK ;
Wang, DY ;
Qiu, Y ;
Cao, LL .
APPLIED SURFACE SCIENCE, 2001, 177 (03) :158-164
[28]   Dependence of indium-tin-oxide work function on surface cleaning method as studied by ultraviolet and x-ray photoemission spectroscopies [J].
Sugiyama, K ;
Ishii, H ;
Ouchi, Y ;
Seki, K .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :295-298
[29]  
Tahar RBH, 1998, J APPL PHYS, V83, P2631, DOI 10.1063/1.367025
[30]   ORGANIC ELECTROLUMINESCENT DIODES [J].
TANG, CW ;
VANSLYKE, SA .
APPLIED PHYSICS LETTERS, 1987, 51 (12) :913-915