Electrical and Optical Characterization of Surface Passivation in GaAs Nanowires

被引：190

作者：

Chang, Chia-Chi ^{[2
,4
]}

Chi, Chun-Yung ^{[1
,4
]}

Yao, Maoqing ^{[1
,4
]}

Huang, Ningfeng ^{[1
,4
]}

Chen, Chun-Chung ^{[1
,4
]}

Theiss, Jesse ^{[1
,4
]}

Bushmaker, Adam W. ^{[5
]}

LaLumondiere, Stephen ^{[5
]}

Yeh, Ting-Wei ^{[3
,4
]}

Povinelli, Michelle L. ^{[1
,4
]}

Zhou, Chongwu ^{[1
,4
]}

Dapkus, P. Daniel ^{[1
,4
]}

Cronin, Stephen B. ^{[1
,2
,4
]}

机构：

[1] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA

[2] Univ So Calif, Dept Phys, Los Angeles, CA 90089 USA

[3] Univ So Calif, Dept Chem Engn & Mat Sci, Los Angeles, CA 90089 USA

[4] Univ So Calif, Ctr Energy Nanosci, Los Angeles, CA 90089 USA

[5] Aerosp Corp, Los Angeles, CA 90009 USA

来源：

NANO LETTERS | 2012年 / 12卷 / 09期

基金：

美国国家科学基金会;

关键词：

MOCVD; EBIC; TR-PL; GaAs; surface passivation; selective area growth; RECOMBINATION VELOCITY; MOBILITY ENHANCEMENT; CARRIER LIFETIME; EFFICIENCY; GROWTH;

D O I：

10.1021/nl301391h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report a systematic study of carrier dynamics in AlxGa1-xAs-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (L-diff) increases from 30 to 180 nm, as measured by electron beam induced current (EBIC) mapping, and the photoluminescence (PL) lifetime increases from sub-60 ps to 1.3 ns. A 48-fold enhancement in the continuous-wave PL intensity is observed on the same individual nanowire with and without the AlxGa1-xAs passivation layer, indicating a significant reduction in surface recombination. These results indicate that, in passivated nanowires, the minority carrier lifetime is not limited by twin stacking faults. From the PL lifetime and minority carrier diffusion length, we estimate the surface recombination velocity (SRV) to range from 1.7 X 10(3) to 1.1 X 10(4) cm.s(-1), and the minority carrier mobility mu is estimated to lie in the range from 10.3 to 67.5 cm(2) V-1 s(-1) for the passivated nanowires.

引用

页码：4484 / 4489

页数：6

共 36 条

[31] Dynamics of strongly degenerate electron-hole Plasmas and excitons in single InP nanowires [J].

Titova, Lyubov V. ;

Hoang, Thang Ba ;

Yarrison-Rice, Jan M. ;

Jackson, Howard E. ;

Kim, Yong ;

Joyce, Hannah J. ;

Gao, Qiang ;

Tan, H. Hoe ;

Jagadish, Chennupati ;

Zhang, Xin ;

Zou, Jin ;

Smith, Leigh M. .

NANO LETTERS, 2007, 7 (11) :3383-3387

[32] GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si [J].

Tomioka, Katsuhiro ;

Motohisa, Junichi ;

Hara, Shinjiroh ;

Hiruma, Kenji ;

Fukui, Takashi .

NANO LETTERS, 2010, 10 (05) :1639-1644

[33] Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate [J].

Tomioka, Katsuhiro ;

Kobayashi, Yasunori ;

Motohisa, Junichi ;

Hara, Shinjiroh ;

Fukui, Takashi .

NANOTECHNOLOGY, 2009, 20 (14)

[34] SOLUTION-LIQUID-SOLID GROWTH OF CRYSTALLINE III-V SEMICONDUCTORS - AN ANALOGY TO VAPOR-LIQUID-SOLID GROWTH [J].

TRENTLER, TJ ;

HICKMAN, KM ;

GOEL, SC ;

VIANO, AM ;

GIBBONS, PC ;

BUHRO, WE .

SCIENCE, 1995, 270 (5243) :1791-1794

[35] MINORITY-CARRIER MOBILITY IN P-TYPE GAAS [J].

WALUKIEWICZ, W ;

LAGOWSKI, J ;

JASTRZEBSKI, L ;

GATOS, HC .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :5040-5042

[36] Composition of AlGaAs [J].

Wasilewski, ZR ;

Dion, MM ;

Lockwood, DJ ;

Poole, P ;

Streater, RW ;

SpringThorpe, AJ .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (04) :1683-1694

← 1 2 3 4 →