GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si

被引：299

作者：

Tomioka, Katsuhiro ^{[1
,2
,3
]}

Motohisa, Junichi ^{[1
]}

Hara, Shinjiroh ^{[2
]}

Hiruma, Kenji ^{[2
]}

Fukui, Takashi ^{[1
,2
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan

[2] Hokkaido Univ, RCIQE, Sapporo, Hokkaido 0608628, Japan

[3] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

NANO LETTERS | 2010年 / 10卷 / 05期

关键词：

Nanowire; core-shell; doping; III-V on Si; LED; III-V NANOWIRES; INDIUM-PHOSPHIDE NANOWIRES; EPITAXIAL-GROWTH; AVALANCHE PHOTODIODES; ARSENIDE NANOWIRES; SILICON; GAAS; PHOTOLUMINESCENCE; TEMPERATURE; GENERATION;

D O I：

10.1021/nl9041774

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned GaAs/AlGaAs core-multishell nanowires with radial p-n junction and NW-LED array were directly fabricated on Si. The threshold current for electroluminescence (EL) was 0.5 mA (current density was approximately 0.4 A/cm(2)), and the EL intensity superlinearly increased with increasing current injections indicating superluminescence behavior. The technology described in this letter could help open new possibilities for monolithic- and on-chip integration of III-V NWs on Si.

引用

收藏

页码：1639 / 1644

页数：6

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