Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays

被引：154

作者：

An, Sung Jin ^{[1
,2
]}

Chae, Jee Hae ^{[1
,2
]}

Yi, Gyu-Chul ^{[1
,2
]}

Park, Gil H. ^{[3
]}

机构：

[1] Natl CRI Ctr Semicond Nanorods, Pohang 790784, Gyeongbuk, South Korea

[2] POSTECH, Dept Mat Sci & Engn, Pohang 790784, Gyeongbuk, South Korea

[3] Cent R&D Inst, Samsung Electromech, Suwon 443743, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 12期

关键词：

D O I：

10.1063/1.2903153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report enhanced light output of GaN-based light-emitting diodes (LEDs) with vertically aligned ZnO nanorod arrays. The ZnO nanorod arrays were prepared on the top layer of GaN LEDs using catalyst-free metalorganic vapor phase epitaxy. Compared to conventional GaN LEDs, light output of GaN LEDs with the ZnO nanorod arrays increased up to 50% and 100% at applied currents of 20 and 50 mA, respectively. The source of the enhanced light output is also discussed. (C) 2008 American Institute of Physics.

引用

页数：3

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