GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer

被引：131

作者：

Kim, JK ^{[1
]}

Gessmann, T

Schubert, EF

Xi, JQ

Luo, H

Cho, J

Sone, C

Park, Y

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[2] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[3] Samsung Adv Inst Technol, Photon Program Team, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2159097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Enhancement of light extraction in a GaInN light-emitting diode (LED) employing a conductive omnidirectional reflector (ODR) consisting of GaN, an indium-tin oxide (ITO) nanorod low-refractive-index layer, and an Ag layer is presented. An array of ITO nanorods is deposited on p-type GaN by oblique-angle electron-beam deposition. The refractive index of the nanorod ITO layer is 1.34 at 461 nm, significantly lower than that of dense ITO layer, which is n=2.06. The GaInN LEDs with GaN/low-n ITO/Ag ODR show a lower forward voltage and a 31.6% higher light-extraction efficiency than LEDs with Ag reflector. This is attributed to enhanced reflectivity of the ODR that employs the low-n ITO layer. (c) 2006 American Institute of Physics.

引用

页数：3

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