GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflector

被引：91

作者：

Kim, JK ^{[1
]}

Gessmann, T ^{[1
]}

Luo, H ^{[1
]}

Schubert, EF ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 22期

关键词：

D O I：

10.1063/1.1757634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A GaInN light-emitting diode (LED) employing an omni-directional reflector (ODR) is presented. The ODR consists of a RuO2 ohmic contact to p-type GaN, a quarter-wave thick SiO2 low-index layer perforated by an array of micro-contacts, and an Ag layer. Calculations predict a 98% angle-averaged reflectivity at lambda=450 nm for an GaN/SiO2/Ag ODR, much higher than that for a 20 period Al0.25Ga0.75N/GaN distributed Bragg reflector (49%) and an Ag reflector (94%). It is shown that the RuO2/SiO2/Ag ODR has higher reflectivity than Ni/Au and even Ag reflectors, leading to a higher light extraction efficiency of GaInN LEDs with ODR. The electrical properties of the ODR-LED are comparable to those LEDs with a conventional Ni/Au contact. (C) 2004 American Institute of Physics.

引用

页码：4508 / 4510

页数：3

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