GaInN light-emitting diodes with omni directional reflectors

被引：14

作者：

Gessmann, T ^{[1
]}

Li, YL ^{[1
]}

Schubert, EF ^{[1
]}

Graff, JW ^{[1
]}

Sheu, JK ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

来源：

LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS VII | 2003年 / 4996卷

关键词：

GaInN; light-emitting diodes; light extraction; omni directional reflectors;

D O I：

10.1117/12.479771

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A high-reflectivity omni directional reflector (ODR) has been incorporated into a GaInN light-emitting diode (LED) structure. The ODR comprises a transparent, electrically conductive quarter-wave layer of indium tin oxide clad by silver and serves as an ohmic contact to p-type GaN. It is shown that ODR-LEDs have low optical losses and high extraction efficiency. Mesa-structure GaInN / GaN ODR-LEDs emitting in the blue wavelength range are demonstrated and compared to GaInN / GaN LEDs with semitransparent Ni / Au top contacts. The extraction efficiency of ODR-LEDs is higher as compared to conventional LEDs with Ni / Au contacts.

引用

页码：139 / 144

页数：6

共 14 条

[1]

Chen C., 2001, MAT RES SOC S, V639

[2] High-quality distributed Bragg reflectors based on AlxGa1-xN/GaN multilayers grown by molecular-beam epitaxy [J].

Fernández, S ;

Naranjo, FB ;

Calle, F ;

Sánchez-García, MA ;

Calleja, E ;

Vennegues, P ;

Trampert, A ;

Ploog, KH .

APPLIED PHYSICS LETTERS, 2001, 79 (14) :2136-2138

[3] Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN [J].

Horng, RH ;

Wuu, DS ;

Lien, YC ;

Lan, WH .

APPLIED PHYSICS LETTERS, 2001, 79 (18) :2925-2927

[4]

ILLEK S, 2002, COMPOUND SEMICON JAN, P1

[5] A study of transparent indium tin oxide (ITO) contact to p-GaN [J].

Kim, DW ;

Sung, YJ ;

Park, JW ;

Yeom, GY .

THIN SOLID FILMS, 2001, 398 :87-92

[6] AlGaInN-based ultraviolet light-emitting diodes grown on Si(111) [J].

Kipshidze, G ;

Kuryatkov, V ;

Borisov, B ;

Holtz, M ;

Nikishin, S ;

Temkin, H .

APPLIED PHYSICS LETTERS, 2002, 80 (20) :3682-3684

[7] Indium tin oxide contacts to gallium nitride optoelectronic devices [J].

Margalith, T ;

Buchinsky, O ;

Cohen, DA ;

Abare, AC ;

Hansen, M ;

DenBaars, SP ;

Coldren, LA .

APPLIED PHYSICS LETTERS, 1999, 74 (26) :3930-3932

[8] Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells [J].

Shatalov, M ;

Zhang, J ;

Chitnis, AS ;

Adivarahan, V ;

Yang, J ;

Simin, G ;

Khan, MA .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :302-309

[9] High-transparency Ni/Au ohmic contact to p-type GaN [J].

Sheu, JK ;

Su, YK ;

Chi, GC ;

Koh, PL ;

Jou, MJ ;

Chang, CM ;

Liu, CC ;

Hung, WC .

APPLIED PHYSICS LETTERS, 1999, 74 (16) :2340-2342

[10] Illumination with solid state lighting technology [J].

Steigerwald, DA ;

Bhat, JC ;

Collins, D ;

Fletcher, RM ;

Holcomb, MO ;

Ludowise, MJ ;

Martin, PS ;

Rudaz, SL .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :310-320

← 1 2 →