Oxygen-induced defect luminescence in porous silicon

被引：3

作者：

OKeeffe, P ^{[1
]}

Komuro, S ^{[1
]}

Morikawa, T ^{[1
]}

Aoyagi, Y ^{[1
]}

机构：

[1] TOYO UNIV, FAC ENGN, KAWAGOE, SAITAMA 350, JAPAN

来源：

APPLIED SURFACE SCIENCE | 1997年 / 113卷

关键词：

porous silicon; luminescence; time-resolved luminescence; oxidation; oxygen-induced defect states;

D O I：

10.1016/S0169-4332(96)00890-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Photoluminescence properties of oxidized porous silicon (PS) have been studied. Time-resolved photoluminescence (TRPL) measurements probed by tunable-excitation over the photon energy range 3.68-1.94 eV for temperatures of 20 K and room temperature show two emission bands, a high energy band (HEB) in the blue and a low energy band (LEE) in the red. The origin of the HEB PL is identified as oxygen-induced defect states with a broad distribution of 2.5 +/- 0.3 eV. These oxygen-induced defect states act as radiative recombination centers into which selective excitation of carriers results in the pronounced enhancement of the PL with the decay time of 5-6 ns. The LEE with the decay time of microsecond order is located around 2.1-2.0 eV and is similar to photoluminescence observed in amorphous materials characterized by carrier recombination via band-tail states.

引用

页码：135 / 139

页数：5

共 19 条

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