RADICAL-BEAM-INDUCED SURFACE-REACTION PROCESSES OF POROUS SI

被引：9

作者：

OKEEFFE, P ^{[1
]}

KOMURO, S ^{[1
]}

KATO, T ^{[1
]}

MORIKAWA, T ^{[1
]}

AOYAGI, Y ^{[1
]}

机构：

[1] TOYO UNIV,FAC ENGN,KAWAGOE,SAITAMA 350,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 12B期

关键词：

POROUS SILICON; ECR PLASMA; OXYGEN RADICAL; OXIDATION; ENHANCED LUMINESCENCE; STABILITY OF LUMINESCENCE; SURFACE REACTION PROCESS; SI BACKBOND; DANGLING BONDS;

D O I：

10.1143/JJAP.33.7117

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new-low temperature dry oxidation process, unlike the presently used methods of wet chemical processing or high-temperature rapid thermal annealing, for the oxidation of porous silicon (PS) is described. In this process the active oxygen radical species from an electron cyclotron resonance plasma were employed for the first time to achieve room-temperature oxidation of PS. This process allows manipulation of the PS surface chemistry which has resulted in both the enhancement and stabilization of the photoluminescence (PL) intensity. These results are explained on the basis of a proposed model in which surface-induced processes incorporate oxygen atoms not only in the outermost Si-O-Si layer but also in the backbonded Si of PS. Furthermore, it is shown that this backbond oxidation is the main mechanism responsible for the enhancement and stabilization of the PL intensity.

引用

页码：7117 / 7122

页数：6

共 12 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].