Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films

被引：49

作者：

Cong, GW

Peng, WQ

Wei, HY

Han, XX

Wu, JJ

Liu, XL

Zhu, QS

Wang, ZG

Lu, JG

Ye, ZZ

Zhu, LP

Qian, HJ

Su, R

Hong, CH

Zhong, J

Ibrahim, K

Hu, TD

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[3] Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100039, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 06期

关键词：

D O I：

10.1063/1.2171804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The valence band structures of Al-N-codoped [ZnO:(Al, N)] and N-doped (ZnO:N) ZnO films were studied by normal and soft x-ray photoelectron spectroscopy. The valence-band maximum of ZnO:(Al, N) shifts up to Fermi energy level by about 300 meV compared with that of ZnO:N. Such a shift can be attributed to the existence of a kind of Al-N in ZnO:(Al, N), as supported by core level XPS spectra and comparison of modified Auger parameters. Al-N increased the relative quantity of Zn-N in ZnO:(Al, N), while N-N decreased that of Zn-N in ZnO:N. (c) 2006 American Institute of Physics.

引用

页数：3

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