Highly reflective and low-resistant Ni/Au/ITO/Ag ohmic contact on p-type GaN

被引：32

作者：

Kim, SY ^{[1
]}

Lee, JL ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Kyungbuk, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 05期

关键词：

D O I：

10.1149/1.1676115

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report low-resistant and high reflective ohmic contact on p-type GaN using a promising Ni/Au/indium-tin oxide (ITO)/Ag contact scheme. Specific contact resistivity as low as 3.2x10(-5) Omega cm(2) was obtained from Ni(20Angstrom)/Au (30Angstrom)/ITO (600 Angstrom)/Ag (1200 Angstrom) contact annealed at 500degreesC under an oxidizing ambient. The relative reflectance of contact was evaluated to be 78.8%, which is 14.6% higher than the Ni/Au contact. The ITO layer acted as a diffusion barrier for both indiffusion of Ag and out-diffusion of Au, providing a low resistant and highly reflective ohmic contact on p-type GaN. (C) 2004 The Electrochemical Society.

引用

页码：G102 / G104

页数：3

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