Low-resistance and thermally stable ohmic contact on p-type GaN using Pd/Ni metallization

被引：36

作者：

Jang, HW

Kim, KH

Kim, JK

Hwang, SW

Yang, JJ

Lee, KJ

Son, SJ

Lee, JL ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Kyungbuk, South Korea

[2] Knowledgeon Inc, Iksan 570210, Chunbuk, South Korea

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 12期

关键词：

D O I：

10.1063/1.1403660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a low-resistance thermally stable ohmic contact on p-type GaN using a promising contact scheme of Pd/Ni. Specific contact resistance as low as 5.7x10(-5) Omega cm(2) was obtained from the Pd (30 Angstrom)/Ni (70 Angstrom) contact annealed at 500 degreesC under an oxidizing ambient. NiO that formed at the surface prevented Pd atoms from outdiffusing, promoting the formation of Pd gallides, Ga2Pd5 and Ga5Pd. This reaction produces Ga vacancies below the contact, leading to enhancement of the thermal stability as well as reduction of the contact resistivity. (C) 2001 American Institute of Physics.

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页码：1822 / 1824

页数：3

相关论文

共 10 条

[1] Study of oxygen chemisorption on the GaN(0001)-(1x1) surface [J].

Bermudez, VM .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) :1190-1200

[2] Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization [J].

Chu, CF ;

Yu, CC ;

Wang, YK ;

Tsai, JY ;

Lai, FI ;

Wang, SC .

APPLIED PHYSICS LETTERS, 2000, 77 (21) :3423-3425

[3] Very low resistance multilayer ohmic contact to n-GaN [J].

Fan, ZF ;

Mohammad, SN ;

Kim, W ;

Aktas, O ;

Botchkarev, AE ;

Morkoc, H .

APPLIED PHYSICS LETTERS, 1996, 68 (12) :1672-1674

[4] Low-resistance ohmic contacts to p-type GaN [J].

Ho, JK ;

Jong, CS ;

Chiu, CC ;

Huang, CN ;

Chen, CY ;

Shih, KK .

APPLIED PHYSICS LETTERS, 1999, 74 (09) :1275-1277

[5]

Kim CC, 2000, ELECTROCHEM SOLID ST, V3, P335

[6] Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment [J].

Kim, JK ;

Lee, JL ;

Lee, JW ;

Shin, HE ;

Park, YJ ;

Kim, T .

APPLIED PHYSICS LETTERS, 1998, 73 (20) :2953-2955

[7] Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaN [J].

Kim, JK ;

Je, JH ;

Lee, JW ;

Park, YJ ;

Kim, T ;

Jung, IO ;

Lee, BT ;

Lee, JL .

JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (02) :L8-L12

[8] Long-term thermal stability of Ti/Al/Pt/Au Ohmic contacts to n-type GaN [J].

Lee, CT ;

Kao, HW .

APPLIED PHYSICS LETTERS, 2000, 76 (17) :2364-2366

[9] Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN [J].

Luther, BP ;

Mohney, SE ;

Jackson, TN ;

Khan, MA ;

Chen, Q ;

Yang, JW .

APPLIED PHYSICS LETTERS, 1997, 70 (01) :57-59

[10] Low resistance Ti/Pt/Au ohmic contacts to p-type GaN [J].

Zhou, L ;

Lanford, W ;

Ping, AT ;

Adesida, I ;

Yang, JW ;

Khan, A .

APPLIED PHYSICS LETTERS, 2000, 76 (23) :3451-3453