Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaN

被引：11

作者：

Kim, JK ^{[1
]}

Je, JH

Lee, JW

Park, YJ

Kim, T

Jung, IO

Lee, BT

Lee, JL

机构：

[1] Pohang Univ Sci & Technol, POSTECH, Dept Mat Sci & Engn, Pohang 790784, Kyoungbuk, South Korea

[2] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea

[3] Chonnam Natl Univ, Dept Engn Met, Kwangju 500757, South Korea

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 02期

关键词：

p-type GaN; ohmic contact; microstructure;

D O I：

10.1007/s11664-001-0110-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical properties of Ni/Au ohmic contacts on p-type GaN were interpreted with the change of microstructure observed under transmission electron microscopy. The contact resistivity was decreased from 1.3 x 10(-2) to 6.1 x 10(-4) Omega cm(2) after annealing at 600 degreesC. The reduction is due to the dissolution of Ga atoms into Au-Ni solid solution formed during annealing, via the generation of Ga vacancies, Thus, net concentration of holes increased below the contact, resulting in the reduction of contact resistivity. At 800 degreesC, N atoms decomposed; reacted with Ni, and forming cubic Ni4N. Consequently, N vacancies, acting as donors in GaN, were generated below the contact, leading to the increase of contact resistivity to 3.8 x 10(-2) Omega cm(2).

引用

页码：L8 / L12

页数：5

共 17 条

[1] Growth and applications of Group III nitrides [J].

Ambacher, O .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (20) :2653-2710

[2] THERMODYNAMIC ANALYSIS OF GA-IN, AL-GA, AL-IN AND AL-GA-IN SYSTEMS [J].

ANSARA, I ;

BROS, JP ;

GIRARD, C .

CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY, 1978, 2 (03) :187-196

[3] Schottky contact and thermal stability of Ni on n-type GaN - Comment [J].

Duxstad, KJ ;

Haller, EE .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (01) :491-492

[4] Schottky contact and the thermal stability of Ni on n-type GaN [J].

Guo, JD ;

Pan, FM ;

Feng, MS ;

Guo, RJ ;

Chou, PF ;

Chang, CY .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (03) :1623-1627

[5]

HANSEN M, 1958, CONSTITUTION BINARY, P217

[6] Low-resistance ohmic contacts to p-type GaN [J].

Ho, JK ;

Jong, CS ;

Chiu, CC ;

Huang, CN ;

Chen, CY ;

Shih, KK .

APPLIED PHYSICS LETTERS, 1999, 74 (09) :1275-1277

[7] Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment [J].

Kim, JK ;

Lee, JL ;

Lee, JW ;

Shin, HE ;

Park, YJ ;

Kim, T .

APPLIED PHYSICS LETTERS, 1998, 73 (20) :2953-2955

[8] Study of contact resistivity, mechanical integrity, and thermal stability of Ti/Al and Ta/Al ohmic contacts to n-type GaN [J].

Luther, BP ;

Mohney, SE ;

Delucca, JM ;

Karlicek, RF .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) :196-199

[9] Estimated phase equilibria in the transition metal-Ga-N systems: Consequences for electrical contacts to GaN [J].

Mohney, SE ;

Lin, X .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (05) :811-818

[10] Schottky barriers and contact resistances on p-type GaN [J].

Mori, T ;

Kozawa, T ;

Ohwaki, T ;

Taga, Y ;

Nagai, S ;

Yamasaki, S ;

Asami, S ;

Shibata, N ;

Koike, M .

APPLIED PHYSICS LETTERS, 1996, 69 (23) :3537-3539

← 1 2 →