Low resistance Ti/Pt/Au ohmic contacts to p-type GaN

被引：85

作者：

Zhou, L

Lanford, W

Ping, AT

Adesida, I

Yang, JW

Khan, A

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[2] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA

[3] Univ S Carolina, Dept Elect & Comp Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 23期

关键词：

D O I：

10.1063/1.126674

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical properties of Ti (15 nm)/Pt (50 nm)/Au (80 nm) contacts on moderately doped p-GaN (N-A = 3.0x10(17)cm(-3)) are reported. Linear current-voltage characteristics were observed after annealing the contacts for 1 min at temperatures above 700 degrees C. The best ohmic contacts were obtained after annealing in a Na ambient at 800 degrees C for 2 min. These contacts exhibited a specific contact resistance R-c of 4.2x10(-5) Omega cm(2) and contact resistivity rho(c) of 21 Omega mm. Possible mechanisms for the lower contact resistivity of Ti/Pt/Au contacts are discussed. The processing for the Ti/Pt/Au ohmic contacts is compatible with routine fabrication steps for GaN devices. (C) 2000 American Institute of Physics. [S0003-6951(00)03723-2].

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页码：3451 / 3453

页数：3

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