Record performance of a 250 GHz InP-based heterostructure barrier varactor tripler

被引：22

作者：

Mélique, X

Maestrini, A

Mounaix, P

Favreau, M

Vanbésien, O

Goutoule, JM

Beaudin, G

Nähri, T

Lippens, D

机构：

[1] Univ Lille 1, Inst Elect & Microelect Nord, CNRS, UMR 9929, F-59652 Villeneuve Dascq, France

[2] Observ Paris Meudon, DEMIRM, F-75014 Paris, France

[3] Matra Marconi Space France, F-31402 Toulouse, France

[4] European Space Res & Technol Ctr, NL-2000 AG Noordwijk, Netherlands

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 11期

关键词：

D O I：

10.1049/el:19990626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Record performances in terms of output power (9.5dBm) and maximum efficiency (12.3%) have been demonstrated for a 250GHz heterostructure barrier varactor tripler. Such good results are explained by the use of highly nonlinear InGaAs/InAlAs/AlAs planar integrated diodes, which are seen to have numerous advantages over their GaAs-based counterparts.

引用

页码：938 / 939

页数：2

共 4 条

[1] 5-mW and 5% efficiency 216-GHz InP-based heterostructure barrier varactor tripler [J].