5-mW and 5% efficiency 216-GHz InP-based heterostructure barrier varactor tripler

被引：29

作者：

Mélique, X ^{[1
]}

Mann, C

Mounaix, P

Thornton, J

Vanbésien, O

Mollot, F

Lippens, D

机构：

[1] Univ Sci & Tech Lille Flandres Artois, UMR CNRS 9929, Inst Elect & Microelect Nord, F-59652 Villeneuve Dascq, France

[2] Rutherford Appleton Lab, Didcot OX11 0QX, Oxon, England

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1998年 / 8卷 / 11期

关键词：

HBV's; InP-based materials; varactor tripler;

D O I：

10.1109/75.736253

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on record performance in terms of efficiency and output power for an InP-based heterostructure barrier varactor (HBV) tripler, Owing to a step-like InGaAs/InAlAs/AlAs barrier scheme, the device exhibits excellent voltage handling with low leakage current (10 A/cm(2)) up to at least 5 V. A 4 x 12 mu m(2) finger-shaped device in a dual configuration yielded a delivered output power of 5 mW (5.4% conversion efficiency) at 216 GHz.

引用

页码：384 / 386

页数：3

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