A novel gate-overlapped LDD poly-si thin-film transistor

被引：11

作者：

Choi, KY

Han, MK

机构：

[1] School of Electrical Engineering, Seoul National University

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 12期

关键词：

D O I：

10.1109/55.545772

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricate a new polycrystalline silicon thin-film transistor (poly-Si TFT), called a gate-overlapped lightly doped drain (GO LDD) TFT, which reduces the leakage current without sacrificing the ON current, A new GO-LDD TFT, of which the electrical characteristics are tolerable to the change of LDD doping concentration, can be easily fabricated by employing the buffer oxide without any additional LDD implantation, The change of ON current due to the misalignment of the LDD region may be eliminated, Experimental results show that the leakage current of the proposed TFT's is reduced by two orders of magnitude, compared with that of conventional nonoffset TFT, while the ON current is not decreased, It is observed that the ON/OFF current ratio is not changed significantly with LDD doping concentration and LDD length.

引用

收藏

页码：566 / 568

页数：3

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