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A MODEL FOR THE ELECTRIC-FIELD IN LIGHTLY DOPED DRAIN STRUCTURES
被引:42
作者
:
MAYARAM, K
论文数:
0
引用数:
0
h-index:
0
MAYARAM, K
LEE, JC
论文数:
0
引用数:
0
h-index:
0
LEE, JC
HU, CM
论文数:
0
引用数:
0
h-index:
0
HU, CM
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1987年
/ 34卷
/ 07期
关键词
:
D O I
:
10.1109/T-ED.1987.23113
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1509 / 1518
页数:10
相关论文
共 24 条
[1]
ASYMMETRICAL CHARACTERISTICS IN LDD AND MINIMUM-OVERLAP MOSFETS
CHAN, TY
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD RES CTR,PALO ALTO,CA 94304
FAIRCHILD RES CTR,PALO ALTO,CA 94304
CHAN, TY
WU, AT
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD RES CTR,PALO ALTO,CA 94304
FAIRCHILD RES CTR,PALO ALTO,CA 94304
WU, AT
KO, PK
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD RES CTR,PALO ALTO,CA 94304
FAIRCHILD RES CTR,PALO ALTO,CA 94304
KO, PK
HU, CM
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD RES CTR,PALO ALTO,CA 94304
FAIRCHILD RES CTR,PALO ALTO,CA 94304
HU, CM
RAZOUK, RR
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD RES CTR,PALO ALTO,CA 94304
FAIRCHILD RES CTR,PALO ALTO,CA 94304
RAZOUK, RR
[J].
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(01)
: 16
-
19
[2]
DEPENDENCE OF CHANNEL ELECTRIC-FIELD ON DEVICE SCALING
CHAN, TY
论文数:
0
引用数:
0
h-index:
0
CHAN, TY
KO, PK
论文数:
0
引用数:
0
h-index:
0
KO, PK
HU, C
论文数:
0
引用数:
0
h-index:
0
HU, C
[J].
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(10)
: 551
-
553
[3]
DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
GAENSSLEN, FH
YU, HN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
YU, HN
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
RIDEOUT, VL
BASSOUS, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
BASSOUS, E
LEBLANC, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
LEBLANC, AR
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
: 256
-
268
[4]
DUVVURY C, 1983, DEC IEDM, P388
[5]
SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION
ELMANSY, YA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,OTTAWA,ONTARIO,CANADA
ELMANSY, YA
BOOTHROYD, AR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,OTTAWA,ONTARIO,CANADA
BOOTHROYD, AR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(03)
: 254
-
262
[6]
EVALUATION OF LDD MOSFETS BASED ON HOT-ELECTRON-INDUCED DEGRADATION
HSU, FC
论文数:
0
引用数:
0
h-index:
0
HSU, FC
CHIU, KY
论文数:
0
引用数:
0
h-index:
0
CHIU, KY
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(05)
: 162
-
165
[7]
HU C, 1983, DEC IEDM, P176
[8]
HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT
HU, CM
论文数:
0
引用数:
0
h-index:
0
HU, CM
TAM, SC
论文数:
0
引用数:
0
h-index:
0
TAM, SC
HSU, FC
论文数:
0
引用数:
0
h-index:
0
HSU, FC
KO, PK
论文数:
0
引用数:
0
h-index:
0
KO, PK
CHAN, TY
论文数:
0
引用数:
0
h-index:
0
CHAN, TY
TERRILL, KW
论文数:
0
引用数:
0
h-index:
0
TERRILL, KW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(02)
: 375
-
385
[9]
SUBMICROMETER DEVICE DESIGN FOR HOT-ELECTRON RELIABILITY AND PERFORMANCE
HUI, J
论文数:
0
引用数:
0
h-index:
0
HUI, J
MOLL, J
论文数:
0
引用数:
0
h-index:
0
MOLL, J
[J].
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(07)
: 350
-
352
[10]
A NEW SUBSTRATE AND GATE CURRENT PHENOMENON IN SHORT-CHANNEL LDD AND MINIMUM OVERLAP DEVICES
HUI, J
论文数:
0
引用数:
0
h-index:
0
HUI, J
HSU, FC
论文数:
0
引用数:
0
h-index:
0
HSU, FC
MOLL, J
论文数:
0
引用数:
0
h-index:
0
MOLL, J
[J].
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(03)
: 135
-
138
←
1
2
3
→
共 24 条
[1]
ASYMMETRICAL CHARACTERISTICS IN LDD AND MINIMUM-OVERLAP MOSFETS
CHAN, TY
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD RES CTR,PALO ALTO,CA 94304
FAIRCHILD RES CTR,PALO ALTO,CA 94304
CHAN, TY
WU, AT
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD RES CTR,PALO ALTO,CA 94304
FAIRCHILD RES CTR,PALO ALTO,CA 94304
WU, AT
KO, PK
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD RES CTR,PALO ALTO,CA 94304
FAIRCHILD RES CTR,PALO ALTO,CA 94304
KO, PK
HU, CM
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD RES CTR,PALO ALTO,CA 94304
FAIRCHILD RES CTR,PALO ALTO,CA 94304
HU, CM
RAZOUK, RR
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD RES CTR,PALO ALTO,CA 94304
FAIRCHILD RES CTR,PALO ALTO,CA 94304
RAZOUK, RR
[J].
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(01)
: 16
-
19
[2]
DEPENDENCE OF CHANNEL ELECTRIC-FIELD ON DEVICE SCALING
CHAN, TY
论文数:
0
引用数:
0
h-index:
0
CHAN, TY
KO, PK
论文数:
0
引用数:
0
h-index:
0
KO, PK
HU, C
论文数:
0
引用数:
0
h-index:
0
HU, C
[J].
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(10)
: 551
-
553
[3]
DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
GAENSSLEN, FH
YU, HN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
YU, HN
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
RIDEOUT, VL
BASSOUS, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
BASSOUS, E
LEBLANC, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
LEBLANC, AR
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
: 256
-
268
[4]
DUVVURY C, 1983, DEC IEDM, P388
[5]
SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION
ELMANSY, YA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,OTTAWA,ONTARIO,CANADA
ELMANSY, YA
BOOTHROYD, AR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES,OTTAWA,ONTARIO,CANADA
BOOTHROYD, AR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(03)
: 254
-
262
[6]
EVALUATION OF LDD MOSFETS BASED ON HOT-ELECTRON-INDUCED DEGRADATION
HSU, FC
论文数:
0
引用数:
0
h-index:
0
HSU, FC
CHIU, KY
论文数:
0
引用数:
0
h-index:
0
CHIU, KY
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(05)
: 162
-
165
[7]
HU C, 1983, DEC IEDM, P176
[8]
HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT
HU, CM
论文数:
0
引用数:
0
h-index:
0
HU, CM
TAM, SC
论文数:
0
引用数:
0
h-index:
0
TAM, SC
HSU, FC
论文数:
0
引用数:
0
h-index:
0
HSU, FC
KO, PK
论文数:
0
引用数:
0
h-index:
0
KO, PK
CHAN, TY
论文数:
0
引用数:
0
h-index:
0
CHAN, TY
TERRILL, KW
论文数:
0
引用数:
0
h-index:
0
TERRILL, KW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(02)
: 375
-
385
[9]
SUBMICROMETER DEVICE DESIGN FOR HOT-ELECTRON RELIABILITY AND PERFORMANCE
HUI, J
论文数:
0
引用数:
0
h-index:
0
HUI, J
MOLL, J
论文数:
0
引用数:
0
h-index:
0
MOLL, J
[J].
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(07)
: 350
-
352
[10]
A NEW SUBSTRATE AND GATE CURRENT PHENOMENON IN SHORT-CHANNEL LDD AND MINIMUM OVERLAP DEVICES
HUI, J
论文数:
0
引用数:
0
h-index:
0
HUI, J
HSU, FC
论文数:
0
引用数:
0
h-index:
0
HSU, FC
MOLL, J
论文数:
0
引用数:
0
h-index:
0
MOLL, J
[J].
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(03)
: 135
-
138
←
1
2
3
→