Reflection anisotropy spectroscopy study of the near surface electric field in low-temperature grown GaAs (001)

被引：17

作者：

Holden, T

Pollak, FH

Freeouf, JL

McInturff, D

Gray, JL

Lundstrom, M

Woodall, JM

机构：

[1] CUNY BROOKLYN COLL,NEW YORK STATE CTR ADV TECHNOL ULTRAFAST PHOTON M,BROOKLYN,NY 11210

[2] INT STUDIES INC,KATONAH,NY 10536

[3] PURDUE UNIV,SCH ELECT & COMP ENGN,W LAFAYETTE,IN 47907

[4] PURDUE UNIV,NSF,MRSEC TECHNOL ENABLING HETEROSTRUCT MAT,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 09期

关键词：

D O I：

10.1063/1.118499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have evaluated an ''effective depletion width'' of less than or equal to 45 Angstrom and the sign (n-type/upward band bending) of the near surface electric field in low-temperature grown GaAs (001) using the optical method of reflection anisotropy spectroscopy in the vicinity of the spin-orbit split E(1), E(1) + Delta(1) optical features. Our results provide evidence that surface Fermi level pinning occurs for air exposed (001) surfaces of undoped low temperature grown GaAs. (C) 1997 American Institute of Physics.

引用

页码：1107 / 1109

页数：3

共 23 条

[1] INSITU INVESTIGATION OF THE LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF LATTICE-MISMATCHED SEMICONDUCTORS USING REFLECTANCE ANISOTROPY MEASUREMENTS [J].