On the sensitivity limit of positron annihilation: detection of vacancies in as-grown silicon

被引：28

作者：

Gebauer, J ^{[1
]}

Rudolf, F

Polity, A

Krause-Rehberg, R

Martin, J

Becker, P

机构：

[1] Univ Halle Wittenberg, Fachbereich Phys, D-06099 Halle, Germany

[2] Phys Tech Bundesanstalt, Fachbereich Expt Forschungsschwerpunkte, D-38116 Braunschweig, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 68卷 / 04期

关键词：

D O I：

10.1007/s003390050915

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vacancy defects in as-grown silicon were observed by positron annihilation. We found a low density of vacancies in float-zone (FZ) silicon, either undoped or lightly nitrogen doped. In contrast, vacancies were less numerous in different Czochralski-grown samples. To obtain a quantitative calibration, electron irradiation with low doses was performed. A vacancy concentration of 1-4 x 10(14) cm(-3) in FZ-Si was obtained.

引用

页码：411 / 416

页数：6

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