Synthesis and temperature-dependent near-band-edge emission of chain-like Mg-doped ZnO nanoparticles

被引:46
作者
Peng, WQ [1 ]
Qu, SC [1 ]
Cong, GW [1 ]
Wang, ZG [1 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.2182010
中图分类号
O59 [应用物理学];
学科分类号
摘要
Chain-like Mg-doped ZnO nanoparticles were prepared using a wet chemical method combined with subsequent heat treatment. The blueshifted near-band-edge emission of the doped ZnO sample with respect to the undoped one was investigated by temperature-dependent photoluminescence. Based on the energy shift of the free-exciton transition, a band gap enlargement of similar to 83 meV was estimated, which seems to result in the equivalent shift of the bound-exciton transition. At 50 K, the transformation from the donor-acceptor-pair to free-to-acceptor emissions was observed for both the undoped and doped samples. The results show that Mg doping leads to the decrease of the acceptor binding energy. (c) 2006 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 17 条
[1]   Optically pumped lasing of ZnO at room temperature [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Koyama, S ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232
[2]   Ultraviolet photoluminescence of ZnO thin film prepared by vapor phase growth using a metallic zinc source [J].
Chen, J ;
Fujita, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (2B) :L203-L205
[3]   One-step growth of ZnO from film to vertically well-aligned nanorods and the morphology-dependent Raman scattering [J].
Cong, GW ;
Wei, HY ;
Zhang, PF ;
Peng, WQ ;
Wu, JJ ;
Liu, XL ;
Jiao, CM ;
Hu, WG ;
Zhu, QS ;
Wang, ZG .
APPLIED PHYSICS LETTERS, 2005, 87 (23) :1-3
[4]   ZnMgO epilayers and ZnO-ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region [J].
Gruber, T ;
Kirchner, C ;
Kling, R ;
Reuss, F ;
Waag, A .
APPLIED PHYSICS LETTERS, 2004, 84 (26) :5359-5361
[5]   Temperature dependent exciton photoluminescence of bulk ZnO [J].
Hamby, DW ;
Lucca, DA ;
Klopfstein, MJ ;
Cantwell, G .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (06) :3214-3217
[6]   Structure and optical properties of cored wurtzite (Zn,Mg)O heteroepitaxial nanowires [J].
Heo, YW ;
Abernathy, C ;
Pruessner, K ;
Sigmund, W ;
Norton, DP ;
Overberg, M ;
Ren, F ;
Chisholm, MF .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (06) :3424-3428
[7]   Room-temperature ultraviolet nanowire nanolasers [J].
Huang, MH ;
Mao, S ;
Feick, H ;
Yan, HQ ;
Wu, YY ;
Kind, H ;
Weber, E ;
Russo, R ;
Yang, PD .
SCIENCE, 2001, 292 (5523) :1897-1899
[8]   Observation of resonant tunneling action in ZnO/Zn0.8Mg0.2O devices [J].
Krishnamoorthy, S ;
Iliadis, AA ;
Inumpudi, A ;
Choopun, S ;
Vispute, RD ;
Venkatesan, T .
SOLID-STATE ELECTRONICS, 2002, 46 (10) :1633-1637
[9]   POINT-DEFECTS AND LUMINESCENCE-CENTERS IN ZINC-OXIDE AND ZINC-OXIDE DOPED WITH MANGANESE [J].
LIU, M ;
KITAI, AH ;
MASCHER, P .
JOURNAL OF LUMINESCENCE, 1992, 54 (01) :35-42
[10]   Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy [J].
Noborisaka, J ;
Motohisa, J ;
Hara, S ;
Fukui, T .
APPLIED PHYSICS LETTERS, 2005, 87 (09)