Enhancement and suppression of spontaneous emission by temperature tuning InAs quantum dots to photonic crystal cavities

被引：52

作者：

Gevaux, DG

Bennett, AJ

Stevenson, RM

Shields, AJ

Atkinson, P

Griffiths, J

Anderson, D

Jones, GAC

Ritchie, DA

机构：

[1] Toshiba Res Europe Univ, Cambridge Res Lab, Cambridge CB4 OWE, England

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 13期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2189747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the control of the spontaneous emission rates in InAs self-assembled quantum dots weakly coupled to the mode of a modified H1 defect cavity in a two-dimensional photonic crystal slab. Changes in sample temperature are used to spectrally tune the exciton emission from a single quantum dot to the monopole mode of the microcavity. A Purcell enhancement of the spontaneous emission rate of up to a factor of 11.4 is seen on-resonance, while suppression by up to a factor of 4.4 is seen off-resonance. Also, a two orders of magnitude increase in the intensity of light detected from the exciton is measured when compared to a quantum dot in bulk GaAs. (c) 2006 American Institute of Physics.

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页数：3

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